S-AU84 2002-12-17 1 toshiba rf power amplifier module S-AU84 power amplifier module for japan cdmaone features high output power : po = 27.5 dbmw (min) low operating current : i cc = 415 ma (typ.) @po = 27.5 dbmw v cc = 3.5 v 1x modulation : i cc = 140 ma (typ.) @po = 17.0 dbmw v cc = 1.3 v 1x modulation low idle current : i cc (idle) = 52 ma (typ.) @v cc = 3.5 v, vdc = 3.6 v, vcon = 2.8 v low leakage current : i cc (leak) = 10 a (max) @v cc = 3.5 v, vdc = 3.6 v, vcon = 0 v low-voltage operation : operation at v cc = 1.3 v is possible. @po = 17.0 dbmw compact package : 6.0 mm 6.0 mm 1.55 mm (5-6b package) maximum ratings (ta = 25c) characteristics symbol rating unit supply voltage 1 v cc1 6 v supply voltage 2 v cc2 6 v bias circuit voltage vdc 6 v control voltage vcon 4 v collector current i cc 1 a power dissipation p d (note) 2 w operating temperature t op 20 to 85 c storage temperature range t stg 0 to 125 c note: ta 25c marking and pin assignment weight: 0.12 g (typ.) u84 pin 1 positioning mark abbreviated product no. weekly lot number (1) pin (2) v cc1 (3) v cc2 (4) gnd (5) gnd (6) gnd (7) pout (8) v dc (9) vcon (10) gnd (11) gnd (12) gnd top view (12) (11) (10) (4) (5) (6) (1) (2) (3) (9) (8) (7) pin 1 positioning
S-AU84 2002-12-17 2 electrical characteristics 1 (1x modulation, f 887-925 mhz, tc 25c, zg zl 50 ) characteristics symbol test condition min typ. max unit collector idle current i cc (idle) 52 75 ma bias circuit current idc (idle) 0.5 2.0 ma control current icon (idle) v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v pi no input 2.5 4.0 ma i cc (leak) 10 a leakage current idc (leak) v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 0 v pi no input 10 a output power 1 po1 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v pi adjust 27.5 28.0 dbmw power gain 1 gp1 25.0 27.5 db collector current 1 i cc1 415 440 ma bias circuit current 1 idc1 2.5 4.0 ma control current 1 icon1 3.5 5.0 ma input vswr 1 vswrin1 2.0 3.5 receiving band noise 1 nrb1 139 137 dbmw /hz 2nd harmonics 1 2fo1 35 30 dbc 3rd harmonics 1 3fo1 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v po 27.5 dbmw 45 40 dbc out-of-band noise 1 n-3mhz1 fo 888 mhz 45 40 dbmw adjacent-channel leakage power ratio 1 acpr1 f 900 khz (note 2) 49 46 dbc adjacent-channel leakage power ratio 2 acpr2 f 1.98 mhz (note 2) 59 56 dbc adjacent-channel leakage power ratio 3 acpr3 f 900 khz (note 2) 50 46 dbc adjacent-channel leakage power ratio 4 acpr4 f 1.98 mhz (note 2) v cc1 v cc2 3.3 v, vdc 3.3 v, vcon 2.8 v po 26.5 dbmw 62 58 dbc stability 1 spr1 v cc1 v cc2 1.0 v to 4.2 v, vdc 3.6 v, vcon 2.8 v, po 27.5 dbmw, zg 50
, load vswr 5:1 all phase, ta 20c to 85c 55 dbc load mismatch 1 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v, po 0-27.5 dbmw, pi adjust, zg 50
, vswr load 7:1 all phase no degradation power gain 2 gp2 22.0 25.5 28.0 db collector current 2 i cc2 140 160 ma bias circuit current 2 idc2 0.8 2.5 ma control current 2 icon2 v cc1 v cc2 1.3 v, vdc 3.6 v, vcon 2.8 v, po 17.0 dbmw 2.5 4.0 ma adjacent-channel leakage power ratio 5 acpr5 f 900 khz (note 2) 50 46 dbc adjacent-channel leakage power ratio 6 acpr6 f 1.98 mhz (note 2) 64 58 dbc caution: the rf power amplifier is sensitive to electrostatic discharge. when handling this product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer.
S-AU84 2002-12-17 3 electrical characteristics 2 (is-95 modulation, f 887-925 mhz, tc 25c, zg zl 50 ) characteristics symbol test condition min typ. max unit output power 2 po2 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v pi adjust 27.5 28.0 dbmw power gain 3 gp3 25.0 27.5 db collector current 3 i cc3 435 460 ma bias circuit current 3 idc3 2.5 4.0 ma control current 3 icon3 3.5 5.0 ma input vswr 2 vswrin2 2.0 3.5 receiving band noise 2 nrb2 138 136 dbmw /hz 2nd harmonics 2 2fo2 35 30 dbc 3rd harmonics 2 3fo2 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v po 27.5 dbmw 45 40 dbc out-of-band noise 2 n-3mhz2 fo 888 mhz 44 40 dbmw adjacent-channel leakage power ratio 7 acpr7 f 900 khz (note 2) 55 50 dbc adjacent-channel leakage power ratio 8 acpr8 f 1.98 mhz (note 2) 58 55 dbc adjacent-channel leakage power ratio 9 acpr9 f 900 khz (note 2) 50 46 dbc adjacent-channel leakage power ratio 10 acpr10 f 1.98 mhz (note 2) v cc1 v cc2 3.3 v, vdc 3.3 v, vcon 2.8 v po 26.5 dbmw 60 56 dbc stability 2 spr2 v cc1 v cc2 1.0 v to 4.2 v, vdc 3.6 v, vcon 2.8 v, po 27.5 dbmw, zg 50
, load vswr 5:1 all phase, ta 20c to 85c 55 dbc load mismatch 2 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v, po 0-27.5 dbmw, pi adjust, zg 50
, vswr load 7:1 all phase no degradation power gain 4 gp4 22.0 25.0 28.0 db collector current 4 i cc4 145 165 ma bias circuit current 4 idc4 0.8 2.5 ma control current 4 icon4 v cc1 v cc2 1.3 v, vdc 3.6 v, vcon 2.8 v, po 17.0 dbmw 2.5 4.0 ma adjacent-channel leakage power ratio 11 acpr11 f 900 khz (note 2) 50 46 dbc adjacent-channel leakage power ratio 12 acpr12 f 1.98 mhz (note 2) 64 58 dbc note1: i cc current of a v cc1 terminal current of a v cc2 terminal note2: acpr a) pc (1.23 mhz) is average power measured for 1.23 mhz bandwidth with carrier frequency. b) p (30 khz) is average power measured for 30 khz bandwidth with 900 khz/1.98 mhz offset. c) acpr1 (or acpr2) p (30 khz) p c (1.23 mhz) db note3: these electrical characteristics are measured using toshiba standard test board in toshiba standard measurement system.
S-AU84 2002-12-17 4 electrical characteristics 3 (1x modulation, f 887-925 mhz, tc 20~85c, zg zl 50 ) characteristics symbol test condition min typ. max unit power gain 5 gp5 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v, po 27.5 dbmw 23.5 db adjacent-channel power ratio 13 acpr13 f 900 khz (note 2) 45 dbc adjacent-channel power ratio 14 acpr14 f 1.98 mhz (note 2) 54 dbc electrical characteristics 4 (is-95 modulation, f 887-925 mhz, tc 20~85c, zg zl 50 ) characteristics symbol test condition min typ. max unit power gain 6 gp6 v cc1 v cc2 3.5 v, vdc 3.6 v, vcon 2.8 v, po 27.5 dbmw 23.5 db adjacent-channel power ratio 15 acpr15 f 900 khz (note 2) 48 dbc adjacent-channel power ratio 16 acpr16 f 1.98 mhz (note 2) 54 dbc
S-AU84 2002-12-17 5 package dimensions weight: 0.12 g (typ.) 1.55 0.15
S-AU84 2002-12-17 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. the dust or vapor is harmful to the body. do not break , cut, crush or dissolve chemically. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 020704eac restrictions on product use
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